unisonic technologies co., ltd 4N30Z power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r502-849.a 4a, 300v n-channel power mosfet ? description the utc 4N30Z is an n-channel mode power mosfet using utc?s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. ? features * r ds(on) <2 ? @ v gs =10v, i d =4a * high switching speed * typically 3.2nc low gate charge * 100% avalanche tested * enhanced esd capability ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 4N30Zl-tn3-r 4N30Zg-tn3-r to-252 g d s tape reel 4N30Zl-tn3-t 4N30Zg-tn3-t to-252 g d s tube note: pin assignment: g: gate d: drain s: source
4N30Z power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw ver.a ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 300 v gate-source voltage v gss 20 v continuous drain current i d 4 a avalanche current i ar 4 a avalanche energy single pulsed e as 52 mj repetitive e ar 52 mj power dissipation p d 1.14 w junction temperature t j +150 c storage temperature t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v ds =0v 300 v drain-source leakage current i dss v ds =300v 1 a gate-source leakage current forward i gss v gs =+20v, v ds =0v 10 a reverse v gs =-20v, v ds =0v 10 a on characteristics gate threshold voltage v gs ( th ) i d =250a 2 4 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =4a 2 ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1mhz 850 pf output capacitance c oss 250 pf reverse transfer capacitance c rss 200 pf switching parameters total gate charge q g v dd =50v, i d =4a, i g =100a, v gs =10v 3.2 nc gate to source charge q gs 0.64 nc gate to drain charge q gd 1.6 nc turn-on delay time t d ( on ) v dd =30v, i d =4a, r g =25 ? , v gs =0~10v 6 ns rise time t r 38 ns turn-off delay time t d ( off ) 11 ns fall-time t f 13 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 4 a maximum body-diode pulsed current i sm 16 a drain-source diode forward voltage v sd i s =4a 0.1 1.48 v
4N30Z power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-849.a ? typical characteristics drain current, i d (a) drain current, i d (a) drain current, i d (a) drain current, i d (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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